GaAs material is a new-generation semiconductor materials after Ge and Si. It has the characteristics of high mobility, brand band gap and has the advantage in the fields of working speed, frequency and photoelectricity characteristic which the Si can not match. GaAs is the most important and mature compound semiconductor materials, its major applications are the fields of micro- and optoelectronic industry.
Dlrow supplies the GaAs material as follows:
Product:
Gallium Arsenide Wafer
Epi-Ready Diameter 2 inch
Product Specification:
| Growing Method |
VB (Vertical Bridgman) |
| Diameter |
50.8 ¡À0.2mm |
| Orientation |
[100] ¡À0.5o
or [100] off [111]A 3o ¡À1o
or [100] off [111]A 15o ¡À1o |
Conductivity Type
Dopant |
N
Si |
| Carrier Concentration |
(0.5-3) x1018cm-3 |
| Hall Mobility |
¡Ý1500 cm2/V¡¤S |
| Etch Pit Density |
¡Ü5000 cm-2 |
| Etch Pit Density Typical |
¢ñ ¡Ü500 cm-2
¢ò ¡Ü1000 cm-2
¢ó ¡Ü5000 cm-2 |
| Standard Thickness |
280 ¡À15¦Ìm
or 350 ¡À20¦Ìm
or on request |
| OF (Primary) (EJ Standard) |
16 ¡À1mm |
| IF (Secondary) (EJ Standard) |
8 ¡À1mm |
| TTV |
¡Ü 10um |
| Warp |
¡Ü 10¦Ìm |
| Front / Back side |
P/P, P/E |
EPI-ready wafer
Particles Size >0.3¦Ìm |
¡Ü 10 |
| Packaging |
25 wafers cassette |
